PART |
Description |
Maker |
IRG4RC10UPBF IRG4RC10UTRPBF IRG4RC10UPBF-15 |
INSULATED GATE BIPOLAR TRANSISTOR Generation 4 IGBT design provides tighter parameter distribution and higher effciency than previous generation INSULATED GATE BIPOLAR TRANSISTOR
|
International Rectifier
|
CT90AM-18 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V INSULATED GATE BIPOLAR TRANSISTOR
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGY25N120-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
MGS13002D-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
MGW20N120-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
MGP7N60ED-D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
CM600HA-28H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules HIGH POWER SWITCHING USE INSULATED TYPE 大功率开关使用绝缘型
|
MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation Powerex, Inc.
|
2PG303 |
Insulated Gate Bipolar Transistor
|
Panasonic
|
MGP15N60U |
Insulated Gate Bipolar Transistor
|
MOTOROLA[Motorola, Inc]
|
MGW12N120 |
Insulated Gate Bipolar Transistor
|
MOTOROLA INC MOTOROLA[Motorola, Inc]
|